A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications
Madhukar Saini*
Published: October 04, 2022
DOI: 10.55162/MCET.03.080
Abstract
GaN HEMT is chosen for many high frequency applications such as Power Amplifiers because of its desirable properties. Most semiconductors fail at high frequency applications because of their thermal and bias limitations. It’s very difficult to operate theamplifier at high frequency and high power ratings. The HEMT transistors can operate at high electric fields and high frequencies. The heterojunction structure provides more no of free electrons without any doping which significantly improves the mobility and the current. The heterostructure also blocks the current flow in unwanted directions. This paper explains about GaN HEMT transistor and its practical application as a Power Amplifier. CREE CGH40010F GaN (10 W) device is chosen and developed at the schematic level. The schematic provides 15.5 dB gain and 66% efficiency.
Keywords: GaN HEMT; Hetero-junction; Power Amplifier